A 28 GHz Phased-Array Transceiver for 5G Applications in 22 nm FD-SOI CMOS

Dan Cracan; Nourhan Elsayed; Mihai Sanduleanu

doi:10.3390/mi14051040

A 28 GHz Phased-Array Transceiver for 5G Applications in 22 nm FD-SOI CMOS

Micromachines (Basel). 2023 May 12;14(5):1040. doi: 10.3390/mi14051040.

Authors

Dan Cracan¹, Nourhan Elsayed², Mihai Sanduleanu³

Affiliations

¹ Nordic Semiconductor ASA, Swindon SN5 6NX, UK.
² GlobalFoundries Inc., Austin, TX 78735, USA.
³ System on Chip Center, Khalifa University, Abu Dhabi P.O. Box 127788, United Arab Emirates.

Abstract

This paper presents the design and implementation of a 28 GHz phased array transceiver for 5G applications using 22 nm FD-SOI CMOS technology. The transceiver consists of a four-channel phased array receiver and transmitter, which employs phase shifting based on coarse and fine controls. The transceiver employs a zero-IF architecture, which is suitable for small footprints and low power requirements. The receiver achieves a 3.5 dB NF with a 1 dB compression point of -21 dBm and a gain of 13 dB.

Keywords: Doherty power amplifier; millimeter-wave; phased array; transceiver.

Grants and funding

This research received external funding from Global Foundries.