Recent Advances on GaN-Based Micro-LEDs

Youwei Zhang; Ruiqiang Xu; Qiushi Kang; Xiaoli Zhang; Zi-Hui Zhang

doi:10.3390/mi14050991

Recent Advances on GaN-Based Micro-LEDs

Micromachines (Basel). 2023 May 1;14(5):991. doi: 10.3390/mi14050991.

Authors

Youwei Zhang¹, Ruiqiang Xu¹, Qiushi Kang², Xiaoli Zhang¹, Zi-Hui Zhang²

Affiliations

¹ Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
² School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China.

Abstract

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as are the optimization techniques for improving the EQE of µLEDs.

Keywords: EQE; GaN; micro-LED; non-radiative recombination; size effect.

Publication types

Review

Grants and funding

This research was funded by International Cooperation Project of Guangdong Province (No. 2019A050510002) and Natural Science Foundation of Guangdong Province (2023A1515011467).