Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

Guangliang Hu; Yinchang Shen; Lvkang Shen; Chunrui Ma; Ming Liu

doi:10.3390/ma16103798

Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

Materials (Basel). 2023 May 17;16(10):3798. doi: 10.3390/ma16103798.

Authors

Guangliang Hu¹, Yinchang Shen¹, Lvkang Shen¹, Chunrui Ma², Ming Liu¹

Affiliations

¹ School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
² State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.

Abstract

In this work, we explored the potential of the ferroelectric gate of (Pb_0.92La_0.08)(Zr_0.30Ti_0.70)O₃ (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V_Dirac of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of V_Dirac is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of V_Dirac under bending deformation of relaxor ferroelectric (Pb_0.92La_0.08)(Zr_0.52Ti_0.48)O₃ (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices.

Keywords: GFET; ferroelectric film; flexible devices; polarization.

Abstract

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