Low-Temperature Sintering of Bi(Ni0.5Ti0.5)O3-BiFeO3-Pb(Zr0.5Ti0.5)O3 Ceramics and Their Performance

Wuyang Wang; Shihao Wang; Jun Sun; Qiushi Wang; Bijun Fang

doi:10.3390/ma16093459

Low-Temperature Sintering of Bi(Ni_0.5Ti_0.5)O₃-BiFeO₃-Pb(Zr_0.5Ti_0.5)O₃ Ceramics and Their Performance

Materials (Basel). 2023 Apr 28;16(9):3459. doi: 10.3390/ma16093459.

Authors

Wuyang Wang¹, Shihao Wang², Jun Sun², Qiushi Wang², Bijun Fang²

Affiliations

¹ Bell Honors School, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
² School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, National Experimental Demonstration Center for Materials Science and Engineering, Changzhou University, Changzhou 213164, China.

Abstract

A low-temperature sintering strategy was realized for preparing 0.21Bi(Ni_0.5Ti_0.5)O₃-0.05BiFeO₃-0.74Pb(Zr_0.5Ti_0.5)O₃ (0.21BNT-0.05BF-0.74PZT) ceramics by conventional ceramic processing by adding low melting point BiFeO₃ and additional sintering aid LiBO₂. Pure perovskite 0.21BNT-0.05BF-0.74PZT ceramics are prepared at relatively low sintering temperatures, and their structure presents tetragonal distortion that is affected slightly by the sintering temperature. The 1030 °C sintered samples have high densification accompanied by relatively large grains. All ceramics have excellent dielectric performance with a relatively high temperature of dielectric constant maximum, and present an apparent relaxation characteristic. A narrow sintering temperature range exists in the 0.21BNT-0.05BF-0.74PZT system, and the 1030 °C sintered 0.21BNT-0.05BF-0.74PZT ceramics exhibit overall excellent electrical performance. The high-temperature conductivity can be attributed to the oxygen vacancies' conduction produced by the evaporation of Pb and Bi during sintering revealed by energy dispersive X-ray measurement.

Keywords: Bi(Ni0.5Ti0.5)O3 end component; electrical performance; relaxation behavior; sintering aid; sintering temperature.

Abstract

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