High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning

Renji Bian; Guiming Cao; Er Pan; Qing Liu; Zefen Li; Lei Liang; Qingyun Wu; Lay Kee Ang; Wenwu Li; Xiaoxu Zhao; Fucai Liu

doi:10.1021/acs.nanolett.3c01053

High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning

Nano Lett. 2023 May 24;23(10):4595-4601. doi: 10.1021/acs.nanolett.3c01053. Epub 2023 May 8.

Authors

Renji Bian^{1

2}, Guiming Cao³, Er Pan¹, Qing Liu¹, Zefen Li¹, Lei Liang¹, Qingyun Wu⁴, Lay Kee Ang⁴, Wenwu Li⁵, Xiaoxu Zhao⁶, Fucai Liu^{1

2

7}

Affiliations

¹ School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
² Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 324003, China.
³ School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China.
⁴ Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore.
⁵ Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China.
⁶ School of Materials Science and Engineering, Peking University, Beijing 100871, China.
⁷ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.

PMID: 37154868
DOI: 10.1021/acs.nanolett.3c01053

Abstract

Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (10⁶) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.

Keywords: electron doping; high on/off ratio; sliding ferroelectric semiconductor; tunable Schottky barrier.