Experimental comparison between Nb2O5- and TiO2-based photoconductive and photogating GFET UV detector

Zahra Sadeghi Neisiani; Mahdi Khaje; Abdollah Eslami Majd

doi:10.1038/s41598-023-34295-5

Experimental comparison between Nb₂O₅- and TiO₂-based photoconductive and photogating GFET UV detector

Sci Rep. 2023 May 2;13(1):7104. doi: 10.1038/s41598-023-34295-5.

Authors

Zahra Sadeghi Neisiani¹, Mahdi Khaje¹, Abdollah Eslami Majd²

Affiliations

¹ Malek Ashtar University of Technology, Tehran, Iran.
² Malek Ashtar University of Technology, Tehran, Iran. a_eslamimajd@mut-es.ac.ir.

Abstract

In the present study, by adding graphene to a photoconductive photodetector with a niobium pentoxide (Nb₂O₅) absorber layer and exploiting the photogating effect, the responsivity of the photodetector is significantly improved. In this photodetector, the Nb₂O₅ layer detects the light, and the graphene improves the responsivity based on the photogating effect. The photocurrent and the percentage ratio of the photocurrent to dark current of the Nb₂O₅ photogating photodetector are compared with those of the corresponding photoconductive photodetector. Also, the Nb₂O₅ photoconductive and photogating photodetectors are compared with titanium dioxide (TiO₂) photoconductive and photogating photodetectors in terms of responsivity at different applied (drain-source) voltages and gate voltages. The results show that the Nb₂O₅ photodetectors have better figures of merit (FOMs) in comparison with the TiO₂ ones.