Protocol for fabrication and characterization of two-dimensional lead halide perovskite thin-film transistors

Xincan Qiu; Yu Liu; Jiangnan Xia; Jing Guo; Ping-An Chen; Huan Wei; Yuanyuan Hu

doi:10.1016/j.xpro.2023.102235

Protocol for fabrication and characterization of two-dimensional lead halide perovskite thin-film transistors

STAR Protoc. 2023 May 1;4(2):102235. doi: 10.1016/j.xpro.2023.102235. Online ahead of print.

Authors

Xincan Qiu¹, Yu Liu², Jiangnan Xia², Jing Guo², Ping-An Chen², Huan Wei², Yuanyuan Hu³

Affiliations

¹ Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China; Shenzhen Research Institute of Hunan University, Shenzhen 518063, China; International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China.
² Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
³ Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China; Shenzhen Research Institute of Hunan University, Shenzhen 518063, China; International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China. Electronic address: yhu@hnu.edu.cn.

Abstract

Two-dimensional (2D) lead halide perovskites (LHPs) are highly attractive for fabricating thin-film transistors (TFTs), but it remains a challenge for 2D LHP TFTs to work at room temperature (RT). Here, we present a protocol for fabricating 2D LHP TFTs that operate well at RT and exhibit high bias-stress stability and storage stability. We describe steps for preparing materials and equipment followed by fabrication of devices. We then detail measurement of device output characteristics and extraction of performance parameters. For complete details on the use and execution of this protocol, please refer to Qiu et al. (2023).¹.

Keywords: Material Sciences; Physics.