Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Xianyue Zhao; Stephan Menzel; Ilia Polian; Heidemarie Schmidt; Nan Du

doi:10.3390/nano13081325

Review on Resistive Switching Devices Based on Multiferroic BiFeO₃

Nanomaterials (Basel). 2023 Apr 10;13(8):1325. doi: 10.3390/nano13081325.

Authors

Xianyue Zhao^{1

2}, Stephan Menzel³, Ilia Polian⁴, Heidemarie Schmidt^{1

2}, Nan Du^{1

2}

Affiliations

¹ Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany.
² Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, Germany.
³ Peter Grünberg Institut (PGI-7), Forschungszentrum Juelich GmbH, Wilhelm-Johnen-Str., 52428 Juelich, Germany.
⁴ Institute of Computer Science and Computer Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany.

Abstract

This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO₃ (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.

Keywords: FTJs; VCM; crystal structure; energy consumption; ferroelectricity; multiferroic BiFeO3; resistive switching; switching property.

Publication types

Review

Abstract

Publication types

Grants and funding