Strong Exciton-Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission

Nano Lett. 2023 May 10;23(9):4058-4065. doi: 10.1021/acs.nanolett.3c00932. Epub 2023 Apr 21.

Abstract

P-band emission is a superlinear low-coherence emission through exciton-exciton (X-X) scattering into photon-like states. It occurs without the prerequisites of population inversion or macroscopical coherence, rendering lower power consumption than the widely explored superlinear low-coherence emissions including superfluorescence, amplified spontaneous emission, and random lasing, and holds great potential for speckle-free imaging and interferometric sensing. However, competition processes including exciton dissociation and annihilation undermine its operation at room temperature and/or low excitation conditions. Here we report room-temperature P-band emission from InSe microflakes with excitation density of 1010 cm-2, offering 2-orders-of-magnitude lower operation density compared to the state-of-the-art superlinear low-coherence emissions. The efficient P-band emission is attributed to a large X-X scattering strength of 0.25 μeV μm2 due to enhanced spatial confinement along with intrinsic material metrics of 3D/2D exciton complex and asymmetric electron/hole mass. These findings open an avenue toward strong low-coherence near-infrared light sources based on van der Waals semiconductors.

Keywords: P-band emission; exciton−exciton scattering; indium selenide; strong low-coherence emission; two-dimensional semiconductors.