The effect of temperature and excitation energy on Raman scattering in bulkHfS2

Igor Antoniazzi; Natalia Zawadzka; Magdalena Grzeszczyk; Tomasz Woźniak; Jordi Ibáñez; Zahir Muhammad; Weisheng Zhao; Maciej R Molas; Adam Babiński

doi:10.1088/1361-648X/acce18

The effect of temperature and excitation energy on Raman scattering in bulkHfS2

J Phys Condens Matter. 2023 Apr 28;35(30). doi: 10.1088/1361-648X/acce18.

Authors

Igor Antoniazzi¹, Natalia Zawadzka¹, Magdalena Grzeszczyk^{1

2}, Tomasz Woźniak³, Jordi Ibáñez⁴, Zahir Muhammad⁵, Weisheng Zhao⁵, Maciej R Molas¹, Adam Babiński¹

Affiliations

¹ Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 02-093 Warsaw, Poland.
² Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.
³ Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27 50-370 Wrocław, Poland.
⁴ Geosciences Barcelona (GEO3BCN), CSIC, Lluís Solé i Sabarís s.n. 08028 Barcelona, Catalonia, Spain.
⁵ Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, People's Republic of China.

PMID: 37072005
DOI: 10.1088/1361-648X/acce18

Abstract

Raman scattering (RS) in bulk hafnium disulfide (HfS2) is investigated as a function of temperature (5 K - 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A1gand E_g) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a modeω₁(134 cm^-1) and the emergence of a new mode at approx. 184 cm^-1, labeledZ, is reported. The optical anisotropy of the RS inHfS2is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A1gmode atT = 5 K and of the E_gmode atT= 300 K in the RS spectrum excited with 3.06 eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboringHfS2layers, which inevitably result from the growth procedure.

Keywords: Raman scattering; excitation energy dependence; phase transition; polarization resolved Raman scattering; temperature dependence; transition metal dichalcogenides.

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