High detectivity solar blind photodetector based on mechanical exfoliated hexagonal boron nitride films

Mengting Qiu; Zhenglin Jia; Mingyang Yang; Kazhihito Nishimura; Cheng-Te Lin; Nan Jiang; Qilong Yuan

doi:10.1088/1361-6528/acccfd

High detectivity solar blind photodetector based on mechanical exfoliated hexagonal boron nitride films

Nanotechnology. 2023 May 2;34(28). doi: 10.1088/1361-6528/acccfd.

Authors

Mengting Qiu^{1

2}, Zhenglin Jia^{1

2}, Mingyang Yang¹, Kazhihito Nishimura¹, Cheng-Te Lin^{1

2}, Nan Jiang^{1

2}, Qilong Yuan¹

Affiliations

¹ Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.

PMID: 37059077
DOI: 10.1088/1361-6528/acccfd

Abstract

As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio (R_205nm/R_280nm= 235) and high detectivity up to 1.28 × 10¹¹Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature.

Keywords: h-BN photodetector; high detectivity; high thermal stability; mechanical exfoliation.