The emerging paradigms of Beyond-5G (B5G), 6G and Future Networks (FN), will capsize the current design strategies, leveraging new technologies and unprecedented solutions. Focusing on the telecom segment and on low-complexity Hardware (HW) components, this contribution identifies RF-MEMS, i.e., Radio Frequency (RF) passives in Microsystem (MEMS) technology, as a key-enabler of 6G/FN. This work introduces four design concepts of RF-MEMS series ohmic switches realized in a surface micromachining process. S-parameters (Scattering parameters) are measured and simulated with a Finite Element Method (FEM) tool, in the frequency range from 100 MHz to 110 GHz. Based on such a set of data, three main aspects are covered. First, validation of the FEM-based modelling methodology is carried out. Then, pros and cons in terms of RF characteristics for each design concept are identified and discussed, in view of B5G, 6G and FN applications. Moreover, ad hoc metrics are introduced to better quantify the S-parameters predictive errors of simulated vs. measured data. In particular, the latter items will be further exploited in the second part of this work (to be submitted later), in which a discussion around compact modelling techniques applied to RF-MEMS switching concepts will also be included.
Keywords: 5G; 6G; Beyond-5G (B5G); Future Networks (FN); MEMS; RF-MEMS; Radio Frequency (RF); micro-relays; millimeter waves; switches.