Effect of a-SiCxNy:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr3 Quantum Dots

Zewen Lin; Zhenxu Lin; Yanqing Guo; Haixia Wu; Jie Song; Yi Zhang; Wenxing Zhang; Hongliang Li; Dejian Hou; Rui Huang

doi:10.3390/nano13071228

Effect of a-SiC_xN_y:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr₃ Quantum Dots

Nanomaterials (Basel). 2023 Mar 30;13(7):1228. doi: 10.3390/nano13071228.

Authors

Zewen Lin^{1

2}, Zhenxu Lin¹, Yanqing Guo¹, Haixia Wu¹, Jie Song¹, Yi Zhang¹, Wenxing Zhang¹, Hongliang Li¹, Dejian Hou¹, Rui Huang¹

Affiliations

¹ School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China.
² National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.

Abstract

The effect of a-SiC_xN_y:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH₄, CH₄, and NH₃ as the precursors, on the stability and photoluminescence of CsPbBr₃ quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr₃ QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr₃ QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr₃ QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr₃ QD thin films, thus holding potential for future developments in optoelectronic devices.

Keywords: CsPbBr3 QDs; a-SiCxNy:H encapsulation; photoluminescence; stability.

Abstract

Grants and funding