A magnetic field controlled memristor towards the design of an implantable detector

Shuangsuo Mao; Bai Sun; Guangdong Zhou; Jiajia Qin; Yusheng Yang; Zhaowei Rao; Mingnan Liu; Chuan Ke; Yong Zhao

doi:10.1016/j.jcis.2023.04.027

A magnetic field controlled memristor towards the design of an implantable detector

J Colloid Interface Sci. 2023 Aug:643:38-46. doi: 10.1016/j.jcis.2023.04.027. Epub 2023 Apr 8.

Authors

Shuangsuo Mao¹, Bai Sun², Guangdong Zhou³, Jiajia Qin¹, Yusheng Yang¹, Zhaowei Rao¹, Mingnan Liu¹, Chuan Ke⁴, Yong Zhao⁵

Affiliations

¹ Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China.
² Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China. Electronic address: baisun@xjtu.edu.cn.
³ College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, China.
⁴ Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
⁵ Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China; Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031, China. Electronic address: zhaoyong@fjnu.edu.cn.

PMID: 37044012
DOI: 10.1016/j.jcis.2023.04.027

Abstract

Memristors, which combine the behaviors of memory and resistive switching (RS), have a wide application prospect in information processing and artificial neural networks. The RS memory behaviors of memristors are primarily determined by the functional layer materials, device structure, and working conditions. Herein, a CuMnO₂ nanomaterial with the manganese copper ore structure was prepared on a Ti substrate by hydrothermal method, and a memristor with the Ag/CuMnO₂/Ti sandwich structure was developed. The RS memory behavior of the as-prepared memristor can be regulated through a low magnetic field (MF), and thus the resistance value of device shows a multi-level resistance states. Compared with other regulation factors, the MF can remotely adjust and control the RS characteristics of memristor, which is a non-invasive and non-destructive regulatory means. The MF regulated memristor can not only be used for multi-level high-density information storage, but also it can protect the health of special populations by identifying the MF intensity of the surrounding environment. When the device is operated in an MF environment, the change of resistance value of the device in both high resistance state (HRS) and low resistance state (LRS) is mainly attributed to the influence of Loren magnetic force on conductive ions.

Keywords: Hydrothermal method; Loren magnetic force; Magnetic field; Memristor; Resistive switching.