Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone

Kaiyue Song; Lingling Du; Guoli Yue; Tao Li; Haohong Li; Shoutian Zheng; Zhirong Chen; Huidong Zheng

doi:10.1016/j.jcis.2023.03.192

Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr₃-based memory device by encapsulating into polyvinylpyrrolidone

J Colloid Interface Sci. 2023 Jul 15:642:408-420. doi: 10.1016/j.jcis.2023.03.192. Epub 2023 Apr 2.

Authors

Kaiyue Song¹, Lingling Du¹, Guoli Yue¹, Tao Li¹, Haohong Li², Shoutian Zheng¹, Zhirong Chen¹, Huidong Zheng³

Affiliations

¹ Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China.
² Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China. Electronic address: lihh@fzu.edu.cn.
³ Qingyuan Innovation Laboratory, Quanzhou, Fujian 362801, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China. Electronic address: youngman@fzu.edu.cn.

PMID: 37023513
DOI: 10.1016/j.jcis.2023.03.192

Abstract

The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H)PbBr₃ (TAZ-H⁺ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr₃/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 °C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr₃@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (10^5.9: 10^3.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 °C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr₃)_nⁿ^- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr₃@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr₃)_nⁿ^- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)_nⁿ⁺ chain in 3D channels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memorizers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.

Keywords: 3D perovskite; Ambient-air-stability of memorizer; Polyvinylpyrrolidone; Ternary memorizers; Thermal tolerance of memorizer.