Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Jinpeng Tian; Qinqin Wang; Xudan Huang; Jian Tang; Yanbang Chu; Shuopei Wang; Cheng Shen; Yancong Zhao; Na Li; Jieying Liu; Yiru Ji; Biying Huang; Yalin Peng; Rong Yang; Wei Yang; Kenji Watanabe; Takashi Taniguchi; Xuedong Bai; Dongxia Shi; Luojun Du; Guangyu Zhang

doi:10.1021/acs.nanolett.3c00031

Scaling of MoS₂ Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Nano Lett. 2023 Apr 12;23(7):2764-2770. doi: 10.1021/acs.nanolett.3c00031. Epub 2023 Apr 3.

Authors

Jinpeng Tian^{1

2}, Qinqin Wang^{1

2}, Xudan Huang^{1

2}, Jian Tang^{1

2}, Yanbang Chu^{1

2}, Shuopei Wang^{1

3}, Cheng Shen^{1

2}, Yancong Zhao^{1

2}, Na Li^{1

3}, Jieying Liu^{1

2}, Yiru Ji^{1

2}, Biying Huang^{1

2}, Yalin Peng^{1

2}, Rong Yang^{1

3}, Wei Yang^{1

2

3}, Kenji Watanabe⁴, Takashi Taniguchi⁴, Xuedong Bai^{1

2}, Dongxia Shi^{1

2}, Luojun Du^{1

2}, Guangyu Zhang^{1

2

3}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
² School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.
³ Songshan Lake Materials Laboratory, Dongguan 523808, China.
⁴ National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan.

PMID: 37010357
DOI: 10.1021/acs.nanolett.3c00031

Abstract

Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS₂) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS₂ FETs. The fabricated 9 nm channel MoS₂ FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 μA/μm at V_DS = 2/1 V, record-low DIBL of ∼50 mV/V, and superior on/off ratio of 3 × 10⁷ and low subthreshold swing of ∼100 mV/dec. Furthermore, the ultrashort channel MoS₂ FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length.

Keywords: MoS2; heterostructure undercut technique; inverter; sub-10 nm channel length; superior performances; ultrascaled transistor.