LARP-assisted synthesis of CsBi3I10 perovskite for efficient lead-free solar cells

Subbiah Vijaya; Jegadesan Subbiah; David J Jones; Sambandam Anandan

doi:10.1039/d3ra00365e

LARP-assisted synthesis of CsBi₃I₁₀ perovskite for efficient lead-free solar cells

RSC Adv. 2023 Mar 29;13(15):9978-9982. doi: 10.1039/d3ra00365e. eCollection 2023 Mar 27.

Authors

Subbiah Vijaya^{1

2}, Jegadesan Subbiah³, David J Jones³, Sambandam Anandan¹

Affiliations

¹ Nanomaterials & Solar Energy Conversion Lab, Department of Chemistry, National Institute of Technology Tiruchirappalli-620015 India sanand@nitt.edu.
² Department of Physics, Vellore Institute of Technology Chennai India.
³ School of Chemistry, Bio21 Institute, The University of Melbourne Parkville VIC 3010 Australia Jsubbiah@unimelb.edu.au.

Abstract

Bismuth-based perovskites are an important class of materials in the fabrication of lead-free perovskite solar cells. Bi-based Cs₃Bi₂I₉ and CsBi₃I₁₀ perovskites are getting much attention due to their appropriate bandgap values of 2.05 eV and 1.77 eV, respectively. However, the device optimisation process plays a key role in controlling the film quality and the performance of perovskite solar cells. Hence, a new strategy to improve crystallization as well as the thin film quality is equally important to develop efficient perovskite solar cells. Herein, an attempt was made to prepare the Bi-based Cs₃Bi₂I₉ and CsBi₃I₁₀ perovskites via the ligand-assisted re-precipitation approach (LARP). The physical, structural, and optical properties were investigated on perovskite films deposited by the solution process for solar cell applications. Cs₃Bi₂I₉ and CsBi₃I₁₀-based perovskite-based solar cells were fabricated using the device architecture of ITO/NiO _x /perovskite layer/PC₆₁BM/BCP/Ag. The device fabricated with CsBi₃I₁₀ showed the best power conversion efficiency (PCE) of 2.3% with an improved fill factor (FF) of 69%, V _OC of 0.79 V, and J _SC of 4.2 mA cm^-2 compared to the Cs₃Bi₂I₉-based device which showed a PCE of 0.7% with a FF of 47%, V _OC of 0.62 V and J _SC of 2.4 mA cm^-2.