Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices

Shaoling Bai; Lin Yang; Katherina Haase; Jakob Wolansky; Zongbao Zhang; Hsin Tseng; Felix Talnack; Joshua Kress; Jonathan Perez Andrade; Johannes Benduhn; Ji Ma; Xinliang Feng; Mike Hambsch; Stefan C B Mannsfeld

doi:10.1002/advs.202300057

Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices

Adv Sci (Weinh). 2023 May;10(15):e2300057. doi: 10.1002/advs.202300057. Epub 2023 Mar 30.

Authors

Shaoling Bai^{1

2}, Lin Yang^{1

3}, Katherina Haase^{1

2}, Jakob Wolansky⁴, Zongbao Zhang⁴, Hsin Tseng⁴, Felix Talnack^{1

2}, Joshua Kress⁴, Jonathan Perez Andrade^{1

2

5}, Johannes Benduhn⁴, Ji Ma^{1

3

6}, Xinliang Feng^{1

3

6}, Mike Hambsch¹, Stefan C B Mannsfeld^{1

2}

Affiliations

¹ Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
² Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
³ Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
⁴ Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
⁵ Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, 01069, Dresden, Germany.
⁶ Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany.

Abstract

Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆V_th ) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large ∆V_th responses is reported. Exposure to low intensity light (25.7 µW cm^-2 ) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 10⁵ ) and memory properties including long retention time (>1.5 × 10⁵ s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.

Keywords: memory; nanographene; organic phototransistors; photosensitivity.

Abstract

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