Few-layer graphene was successfully synthesized on copper foil via chemical vapor deposition with methanol as a carbon source. This was confirmed by optical microscopy observation, Raman spectra measurement, I2D/IG ratio calculation, and 2D-FWHM value comparisons. Monolayer graphene was also found in similar standard procedures, but it required higher growth temperature and longer time periods. The cost-efficient growth conditions for few-layer graphene are thoroughly discussed via TEM observation and AFM measurement. In addition, it has been confirmed that the growth period can be shortened by increasing growth temperature. With the H2 gas flow rate fixed at 15 sccm, few-layer graphene was synthesized at the lower growth temperature of 700 °C in 30 min, and at 900 °C growth temperature in only 5 min. Successful growth was also achieved without adding hydrogen gas flow; this is probably because H2 can be induced from the decomposition of methanol. Through further defects study of few-layer graphene via TEM observation and AFM measurement, we tried to find possible ways for efficiency and quality management in graphene synthesis in industrial applications. Lastly, we investigated graphene formation after pre-treatment with different gas compositions, and found that gas selection is a crucial factor for a successful synthesis.
Keywords: chemical vapor deposition; copper substrate; graphene; methanol.