In the era of digital transformation, a memristor and memristive circuit can provide an advanced computer architecture that efficiently processes a vast quantity of data. With the unique characteristic of memristor, a memristive crossbar array has been utilized for realization of nonvolatile memory, logic-in-memory circuit, and neuromorphic system. However, the crossbar array architecture suffers from leakage of current, known as the sneak current, which causes a cross-talk interference problem between adjacent memristor devices, leading to an unavoidable operational error and high power consumption. Here, we present an amorphous In-Sn-Zn-O (a-ITZO) oxide semiconductor-based selector device to address the sneak current issue. The a-ITZO-selector device is realized with the back-to-back Schottky diode with nonlinear current-voltage (I-V) characteristics. Its nonlinearity is dependent on the oxygen plasma treatment process which can suppress the surface electron accumulation layer arising on the a-ITZO surface. The a-ITZO-selector device shows reliable characteristics against electrical stress and high temperature. In addition, the selector device allows for a stable read margin over 1 Mbit of memristor crossbar array. The findings may offer a feasible solution for the development of a high-density memristor crossbar array.
Keywords: amorphous In-Sn-Zn-O (a-ITZO); memristor crossbar array; selector device.