The use of amino-terminated siloxanes as coupling interface for perovskite single crystals (PSCs)/silicon integrated devices has been demonstrated to be an effective method toward CMOS compatible optoelectronics; however, it suffers from the coupling stability against the hydrophilicity of the exposed terminal amino groups. In this work, a phenyl-terminated interfacial molecule, anilino-methyl-triethoxysilane (AMTES), is proposed to achieve the effectively galvanic coupling between PSCs and silicon, which can not only improve the device environmental reliability but also lower the surface energy of the silicon substrate so as to facilitate the epitaxial growth of PSCs. Benefiting from the interfacial coupling of AMTES, the obtained MAPbI3 SC/silicon integrated device possesses highly efficient multiwavelength photodetection properties across the X-ray and NIR range, which exhibits a specific detectivity D* of 3.84 × 1013 cm Hz1/2 W-1 in the visible-NIR region and an X-ray sensitivity of 1.18 × 104 μC Gyair-1 cm-2 with the lowest detection limit of 49.6 nGyair s-1. The ultra wide -3 dB bandwidth of 67,300 Hz and the linear dynamic range (LDR) of 112 dB also prove its impressive dynamic response capabilities. Moreover, the AMTES modified integrated device almost maintains 96% of the initial photodetection performance even after keeping in the atmosphere environment for 28 days. This work opens a new avenue for interfacial engineering toward the development of on-chip PSC integrated silicon optoelectronic devices.
Keywords: X-ray detection; device integration; interfacial engineering; multiwavelength detection; perovskite single crystal.