Large-area flexible colloidal-quantum-dot infrared photodiodes for photoplethysmogram signal measurements

Xinyi Liang; Yuxuan Liu; Peilin Liu; Junrui Yang; Jing Liu; Yang Yang; Bo Wang; Jun Hu; Linxiang Zhang; Gaoyuan Yang; Shuaicheng Lu; Guijie Liang; Xinzheng Lan; Jianbing Zhang; Liang Gao; Jiang Tang

doi:10.1016/j.scib.2023.03.016

Large-area flexible colloidal-quantum-dot infrared photodiodes for photoplethysmogram signal measurements

Sci Bull (Beijing). 2023 Apr 15;68(7):698-705. doi: 10.1016/j.scib.2023.03.016. Epub 2023 Mar 11.

Authors

Xinyi Liang¹, Yuxuan Liu¹, Peilin Liu¹, Junrui Yang¹, Jing Liu¹, Yang Yang¹, Bo Wang¹, Jun Hu¹, Linxiang Zhang¹, Gaoyuan Yang², Shuaicheng Lu³, Guijie Liang², Xinzheng Lan⁴, Jianbing Zhang⁵, Liang Gao⁶, Jiang Tang⁴

Affiliations

¹ Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
² Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang 441053, China.
³ Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou 325006, China.
⁴ Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China.
⁵ Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou 325006, China; Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, China. Electronic address: jbzhang@mail.hust.edu.cn.
⁶ Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou 325006, China. Electronic address: highlight@hust.edu.cn.

PMID: 36931915
DOI: 10.1016/j.scib.2023.03.016

Abstract

Epitaxially grown photodiodes are the foundation of infrared photodetection technology; however, their rigid structure and limited area scaling limit their use in advanced applications. Colloidal-quantum-dot (CQD) infrared photodiodes have increased active areas through solution processing, and are thus potential candidates for large-area flexible photodetection, but these large-area photodiodes have disadvantages such as large dark current density, poor homogeneity, and poor stability. Therefore, this study established a fabrication strategy for large-area flexible CQD photodiodes that involves introducing polyimide to CQD ink to improve CQD passivation, monodisperse ink persistence, and film morphology. The resulting CQD photodiodes exhibited reduced dark current density and improved homogeneity and work stability. Furthermore, the as-prepared photodiodes exhibited a detectivity (D*) of greater than 10¹³ Jones, which was higher than other reported CQD photodetectors. The CQD photodiodes developed in this study can be used for wearable photoplethysmogram (PPG) signal measurement under ambient light at reduced cost and power consumption.

Keywords: Colloidal quantum dots; Flexible; Infrared photodiode; Large-area; Photoplethysmogram.