Direct neutron detection based on semiconductor crystals holds promise to transform current neutron detector technologies and further boosts their widespread applications. It is, however, long impeded by the dearth of suitable materials in the form of sizeable bulk crystals. Here, high-quality centimeter-sized LiInP2 Se6 single crystals are developed using the Bridgman method and their structure and property characteristics are systematically investigated. The prototype detectors fabricated from the crystals demonstrate an energy resolution of 53.7% in response to α-particles generated from an 241 Am source and robust, well-defined response spectra to thermal neutrons that exhibit no polarization or degradation effects under prolonged neutron/γ-ray irradiation. The primary mechanisms of Se-vacancy and InLi antisite defects in the carrier trapping process are also identified. Such insights are critical for further enhancing the energy resolution of LiInP2 Se6 bulk crystals toward the intrinsic level (≈8.6% as indicated by the chemical vapor transport-grown thin crystals). These results pave the way for practically adopting LiInP2 Se6 single crystals in new-generation solid-state neutron detectors.
Keywords: Bridgman method; LiInP2Se6; charge carrier trapping; defect mechanism; neutron detector; single crystal.
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