High Performance Inverted RbCsFAPbI3 Perovskite Solar Cells Based on Interface Engineering and Defects Passivation

Tahir Imran; Hasan Raza; Liaquat Aziz; Rui Chen; Sanwan Liu; Zhaoyi Jiang; You Gao; Jianan Wang; Muhammad Younis; Sajid Rauf; Zonghao Liu; Wei Chen

doi:10.1002/smll.202207950

High Performance Inverted RbCsFAPbI₃ Perovskite Solar Cells Based on Interface Engineering and Defects Passivation

Small. 2023 Jun;19(25):e2207950. doi: 10.1002/smll.202207950. Epub 2023 Mar 17.

Authors

Tahir Imran¹, Hasan Raza¹, Liaquat Aziz¹, Rui Chen¹, Sanwan Liu¹, Zhaoyi Jiang¹, You Gao¹, Jianan Wang¹, Muhammad Younis², Sajid Rauf³, Zonghao Liu^{1

4}, Wei Chen^{1

4}

Affiliations

¹ Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, China.
² Center of Joining and Electronic Packing, State Key Laboratory of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
³ College of Electronics and Information Engineering, Shenzhen University, Shenzhen, Guangdong Province, 518000, China.
⁴ Optics Valley Laboratory Hubei, Wuhan, 430074, China.

PMID: 36929201
DOI: 10.1002/smll.202207950

Abstract

Lead halide-based perovskites solar cells (PSCs) are intriguing candidates for photovoltaic technology due to their high efficiency, low cost, and simple fabrication processes. Currently, PSCs with efficiencies of >25% are mainly based on methylammonium (MA)-free and bromide (Br) free, formamide lead iodide (FAPbI₃ )-based perovskites, because MA is thermally unstable due to its volatile nature and Br incorporation will induce blue shift in the absorption spectrum. Therefore, MA-free, Br-free formamidine-based perovskites are drawing huge research attention in recent years. The hole transporting layer (HTL) is crucial in fabricating highly efficient and stable inverted p-i-n structured PSCs by enhancing charge extraction, lowering interfacial recombination, and altering band alignment, etc. Here, this work employs a NiO_x /PTAA bi-layer HTL combined with GuHCl (guanidinium hydrochloride) additive engineering and PEAI (phenylethylammonium iodide) passivation strategy to optimize the charge carrier dynamics and tune defects chemistry in the MA-free, Br-free RbCsFAPbI₃ -based perovskite absorber, which boosts the device efficiency up to 22.78%. Additionally, the device retains 95% of its initial performance under continuous 1 sun equivalent LED light illumination at 45 °C for up to 500 h.

Keywords: additive engineering; bi-layer hole transport layers; defect passivation; formamidinium-cesium perovskite; inverted perovskite solar cells.

Abstract

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