Tailoring the epitaxial growth of oriented Te nanoribbon arrays

Jie Li; Junrong Zhang; Junwei Chu; Liu Yang; Xinxin Zhao; Yan Zhang; Tong Liu; Yang Lu; Cheng Chen; Xingang Hou; Long Fang; Yijun Xu; Junyong Wang; Kai Zhang

doi:10.1016/j.isci.2023.106177

Tailoring the epitaxial growth of oriented Te nanoribbon arrays

iScience. 2023 Feb 10;26(3):106177. doi: 10.1016/j.isci.2023.106177. eCollection 2023 Mar 17.

Authors

Jie Li¹, Junrong Zhang^{1

2}, Junwei Chu³, Liu Yang^{1

2}, Xinxin Zhao⁴, Yan Zhang^{1

2}, Tong Liu⁵, Yang Lu^{1

2}, Cheng Chen^{1

2}, Xingang Hou¹, Long Fang^{1

6}, Yijun Xu⁵, Junyong Wang¹, Kai Zhang¹

Affiliations

¹ CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
² School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China.
³ Xi'an Institute of Applied Optics, No.9, West Section of Electron Third Road, Shannxi Xi'an 710065, China.
⁴ Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, China.
⁵ Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
⁶ College of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot 010051, China.

Abstract

As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm² V^-1 s^-1 and 1.5×10⁵, respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.

Keywords: Materials synthesis; Nanomaterials.