In this study, a fibriform electrochemical diode capable of performing rectifying, complementary logic and device protection functions for future e-textile circuit systems is fabricated. The diode was fabricated using a simple twisted assembly of metal/polymer semiconductor/ion gel coaxial microfibers and conducting microfiber electrodes. The fibriform diode exhibited a prominent asymmetrical current flow with a rectification ratio of over 102, and its performance was retained after repeated bending deformations and washings. Fundamental studies on the electrochemical interactions of polymer semiconductors with ions reveal that the Faradaic current generated in polymer semiconductors by electrochemical reactions results in an abrupt current increase under a forward bias, in which the threshold voltages of the device are determined by the oxidation or reduction potential of the polymer semiconductor. Textile-embedded full-wave rectifiers and logic gate circuits were implemented by simply integrating the fibriform diodes, exhibiting AC-to-DC signal conversion and logic operation functions, respectively. It was also confirmed that the proposed fibriform diode can suppress transient voltages and thus protect a low-voltage operational wearable e-textile circuit.
Keywords: electronic textile; electrostatic discharging; fiber-shaped electronic device; ion gel; organic electrochemical diode.