Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors

Li-Feng Zhu; Shiqing Deng; Lei Zhao; Gen Li; Qi Wang; Linhai Li; Yongke Yan; He Qi; Bo-Ping Zhang; Jun Chen; Jing-Feng Li

doi:10.1038/s41467-023-36919-w

Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO₃-based multilayer capacitors

Nat Commun. 2023 Mar 1;14(1):1166. doi: 10.1038/s41467-023-36919-w.

Authors

Li-Feng Zhu^#¹, Shiqing Deng², Lei Zhao^#³, Gen Li⁴, Qi Wang¹, Linhai Li¹, Yongke Yan⁵, He Qi⁶, Bo-Ping Zhang⁷, Jun Chen⁶, Jing-Feng Li⁸

Affiliations

¹ School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
² Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China. sqdeng@ustb.edu.cn.
³ College Physics Science & Technology, Hebei University, Baoding, 071002, China.
⁴ State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
⁵ Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR, China. yanyongke@xjtu.edu.cn.
⁶ Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
⁷ School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China. bpzhang@ustb.edu.cn.
⁸ State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China. jingfeng@mail.tsinghua.edu.cn.

^# Contributed equally.

Abstract

Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for practical applications of dielectric capacitors. Herein, we propose a heterovalent-doping-enabled atom-displacement fluctuation strategy for the design of low-atom-displacements regions in the antiferroelectric matrix to achieve the increase in breakdown strength and enhancement of the energy-storage density for AgNbO₃-based multilayer capacitors. An ultrahigh breakdown strength ~1450 kV·cm^-1 is realized in the Sm_0.05Ag_0.85Nb_0.7Ta_0.3O₃ multilayer capacitors, especially with an ultrahigh U_rec ~14 J·cm^-3, excellent η ~ 85% and P_D,max ~ 102.84 MW·cm^-3, manifesting a breakthrough in the comprehensive energy storage performance for lead-free antiferroelectric capacitors. This work offers a good paradigm for improving the energy storage properties of antiferroelectric multilayer capacitors to meet the demanding requirements of advanced energy storage applications.

Abstract

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