This work researched the effects of irradiation on the current-voltage characteristics and voltage magnetic sensitivity of the silicon magnetic sensitive transistor (SMST). The 1-MeV electron irradiation source was used to irradiate the SMST. The irradiation fluences were 1 × 1012 e/cm2, 1 × 1013 e/cm2 and 1 × 1014 e/cm2, respectively (the irradiation flux was 1 × 1010 cm-2·s-1). The experimental results demonstrate that the collector current (IC) of the SMST occurs attenuation after irradiation under the same collector voltage (VCE) and the base current (IB). The attenuated rate of the IC increases obviously with the enhance of electron irradiation fluence when the IB is the same. Moreover, the attenuated rate of the IC increases slight with the rise of the IB when the electron irradiation fluence is the same. When the supply voltage is 5.0 V (RL = 1.5 kΩ) and the IB is 4.0 mA, the voltage magnetic sensitivity (SV) of the SMST occurs attenuate after irradiation. The attenuated rate of the SV increases with the enhance of electron irradiation fluence.
Keywords: electron irradiation; irradiation damage; silicon magnetic sensitive transistor; voltage magnetic sensitivity.