Temperature-dependent photoluminescence properties of single defects in AlGaN micropillars

Yingxian Xue; Feiliang Chen; Qian Li; Zhiping Ju; Yujing Cao; Shiyu Zhang; Xinrui Yuan; Botao Wu; E Wu

doi:10.1088/1361-6528/acbeb6

Temperature-dependent photoluminescence properties of single defects in AlGaN micropillars

Nanotechnology. 2023 Mar 14;34(22). doi: 10.1088/1361-6528/acbeb6.

Authors

Yingxian Xue¹, Feiliang Chen², Qian Li³, Zhiping Ju¹, Yujing Cao¹, Shiyu Zhang¹, Xinrui Yuan¹, Botao Wu¹, E Wu^{1

4

5}

Affiliations

¹ State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, People's Republic of China.
² School of Electronics Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
³ Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, People's Republic of China.
⁴ Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China.
⁵ Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China.

PMID: 36827696
DOI: 10.1088/1361-6528/acbeb6

Abstract

Single-photon emitters (SPEs) are attractive as integrated platforms for quantum applications in technologically mature wide-bandgap semiconductors since their stable operation at room temperature or even at high temperatures. In this study, we systematically studied the temperature dependence of the SPE in AlGaN micropillar by experiment. The photoluminescence (PL) spectrum, PL intensity, radiative lifetime and second-order autocorrelation function measurements are investigated over the temperature range from 303 to 373 K. The point defects of AlGaN show strong zero phonon line in the wavelength range of 800-900 nm and highly antibunched photon emission even up to 373 K. Our study reveals a possible mechanism for linewidth broadening in AlGaN SPE at high temperatures. This indicates a possible key for on-chip integration applications based on this material operating at high temperatures.

Keywords: AlGaN micropillars; high temperature; single defect; single photon emitter.