Light-Activated Interface Charge-Alternating Interaction on an Extended Gate Photoelectrode: A New Sensing Strategy for EGFET-Based Photoelectrochemical Sensors

ACS Appl Mater Interfaces. 2023 Mar 8;15(9):11866-11874. doi: 10.1021/acsami.2c22970. Epub 2023 Feb 24.

Abstract

Integration of extended gate field-effect transistors (EGFET) and photoelectrochemical (PEC) measurement to construct highly sensitive sensors is an innovative research field that was proven feasible by our previous work. However, it remains a challenge on how to adjust the interaction between the extended gate and the analyte and study its influence on EGFET-based PEC sensors. Herein, a new sensing strategy was proposed by a mutual electrostatic interaction. Three-dimensional TiO2 and g-C3N4 core-shell heterojunction on flexible carbon cloth (TCN) was designed as the extended sensing gate. Tetracycline (TC) was also used as a model analyte, and it contains electron-donating groups (-NH2 and -OH) with negative charge. The designed TCN-extended sensing gate was negatively charged in the dark by introducing carbon vacancies with oxygen doping in the g-C3N4 shell, while it was positively charged under illustration due to the aggregation of photogenerated holes on the surface. Therefore, a light-activated PEC sensing platform for the sensitive and selective determination of tetracycline (TC) was demonstrated. Such a PEC sensor exhibited wide linear ranges within 100 pM to 1 μM and 1-100 μM with a low detection limit of 0.42 pM. Furthermore, the sensing platform possessed excellent selectivity, good reproducibility, and stability. The proposed sensing strategy in this work can expand the paradigm for developing a light-regulated FET-based PEC sensor by mutual electrostatic interaction, and we believe that this work will offer a new perspective for the design of interface interaction in PEC devices.

Keywords: field-effect transistors; g-C3N4/TiO2 heterojunction; interface modulation; mutual electrostatic interaction; photoelectrochemical sensors.