Room-temperature spin injection from a ferromagnetic semiconductor

Shobhit Goel; Nguyen Huynh Duy Khang; Yuki Osada; Le Duc Anh; Pham Nam Hai; Masaaki Tanaka

doi:10.1038/s41598-023-29169-9

Room-temperature spin injection from a ferromagnetic semiconductor

Sci Rep. 2023 Feb 7;13(1):2181. doi: 10.1038/s41598-023-29169-9.

Authors

Shobhit Goel^{1

2}, Nguyen Huynh Duy Khang^{3

4}, Yuki Osada³, Le Duc Anh^{5

6

7

8}, Pham Nam Hai^{9

10

11}, Masaaki Tanaka^{12

13

14

15}

Affiliations

¹ Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan. shobhit09115@gmail.com.
² CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan. shobhit09115@gmail.com.
³ Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8550, Japan.
⁴ Department of Physics, Ho Chi Minh City University of Education, 280 An Duong Vuong Street, District 5, Ho Chi Minh City, 738242, Vietnam.
⁵ Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
⁶ Institute of Engineering Innovation, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
⁷ PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.
⁸ Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
⁹ CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan. pham.n.ab@m.titech.ac.jp.
¹⁰ Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8550, Japan. pham.n.ab@m.titech.ac.jp.
¹¹ Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan. pham.n.ab@m.titech.ac.jp.
¹² Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan. masaaki@ee.t.u-tokyo.ac.jp.
¹³ CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan. masaaki@ee.t.u-tokyo.ac.jp.
¹⁴ Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan. masaaki@ee.t.u-tokyo.ac.jp.
¹⁵ Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan. masaaki@ee.t.u-tokyo.ac.jp.

Abstract

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T_C) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.

Abstract

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