Ag-doped InP/ZnS quantum dots for type-I photosensitizers

Can Ren; Die Hu; Yanyan Cui; Peixian Chen; Xiaoqian Xu; Jiaji Cheng; Tingchao He

doi:10.1039/d2cc06119h

Ag-doped InP/ZnS quantum dots for type-I photosensitizers

Chem Commun (Camb). 2023 Feb 21;59(16):2311-2314. doi: 10.1039/d2cc06119h.

Authors

Can Ren¹, Die Hu², Yanyan Cui¹, Peixian Chen², Xiaoqian Xu², Jiaji Cheng³, Tingchao He¹

Affiliations

¹ Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China. tche@szu.edu.cn.
² Key Laboratory of Cell Biology, Ministry of Public Health and Key Laboratory of Medical Cell Biology, Ministry of Education, China Medical University, Shenyang 110122, China. xqxu@cmu.edu.cn.
³ School of Materials Science and Engineering, Hubei University, Wuhan 430062, China. jiajicheng@hubu.edu.cn.

PMID: 36748302
DOI: 10.1039/d2cc06119h

Abstract

Water-soluble Ag-doped InP/ZnS quantum dots (QDs) with high photoluminescence quantum yield were synthesized and characterized. Their maximum two- and three-photon absorption cross sections are determined as ∼1.7 × 10⁴ GM at 820 nm and ∼1.7 × 10^-76 cm⁶ s² photon^-2 at 1260 nm. Importantly, for the first time, we demonstrated that Ag-doped InP/ZnS QDs can be used for type-I photodynamic therapy and are more suitable for the hypoxic environment of tumors.