At present, chips urgently need breakthrough development in the power consumption and integration. The chip integrates billions or even tens of billions of electronic components, such as field effect transistor, diode and so on. Therefore, the research and development of new low-power electronic components with smaller size is an effective method to reduce chip power consumption and improve chip integration. In this paper, the ferroelectric field effect transistor (Fe-FET) based on two-dimensional heterostructuresα-In2Se3/ZnSe is proposed. Based on the first principle, the program will analyze the stability and band structure ofα-In2Se3/ZnSe under different stacking modes. In the heterojunction, the microphysical mechanism of ferroelectric polarization affecting the electronic structure is revealed from the aspects of charge transfer at the interface and the asymmetric surfaces with different work function. Combined with the non-equilibrium Green's function transport theory, the transport properties of Fe-FET based on theirα-In2Se3/ZnSe will be studied. The application will provide sufficient theoretical support for research and development of the device based onα-In2Se3/ZnSe structure.
Keywords: ferroelectric field effect transistor; ferroelectric heterostructure; interface engineering.
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