Graphdiyne and Its Derivatives as Efficient Charge Reservoirs and Transporters in Semiconductor Devices

Abstract

2D graphdiyne (GDY), which is composed of sp and sp² hybridized carbon atoms, is a promising semiconductor material with a unique porous lamellar structure. It has high carrier mobility, tunable bandgap, high density of states, and strong electrostatic interaction ability with ions and organic functional units. In recent years, interests in applying GDYs (GDY and its derivatives) in semiconductor devices have been growing rapidly, and great achievements have been made. Attractively, GDYs could act as efficient reservoirs and transporters for both carriers and ions, which endows them with enormous potential in future novel optoelectronics. In this review, the progress in this field is systematically summarized, aiming to bring an in-depth insight into the GDYs' intrinsic uniqueness. Particularly, the effects of GDYs on carrier dynamics and ionic interactions in various semiconductor devices are succinctly described, analyzed, and concluded.

Keywords: carrier dynamic processes; electronic properties; graphdiyne; ionic interactions; semiconductor devices.