Correction: Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping

Olga Arroyo-Gascón; Yuriko Baba; Jorge I Cerdá; Oscar de Abril; Ruth Martínez-Casado; Francisco Domínguez-Adame; Leonor Chico

doi:10.1039/d3nr90008h

Correction: Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping

Nanoscale. 2023 Feb 16;15(7):3566. doi: 10.1039/d3nr90008h.

Authors

Olga Arroyo-Gascón^{1

2}, Yuriko Baba², Jorge I Cerdá¹, Oscar de Abril³, Ruth Martínez-Casado², Francisco Domínguez-Adame², Leonor Chico^{1

2}

Affiliations

¹ Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, C/Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain. leochico@ucm.es.
² GISC, Departamento de Física de Materiales, Universidad Complutense, E-28040 Madrid, Spain.
³ Departamento de Estructuras y Física de Edificación, Universidad Politécnica de Madrid, E-28040 Madrid, Spain.

PMID: 36722788
DOI: 10.1039/d3nr90008h

Abstract

Correction for 'Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping' by Olga Arroyo-Gascón et al., Nanoscale, 2022, 14, 7151-7162, https://doi.org/10.1039/D1NR07120C.

Publication types

Published Erratum