Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

Zhijian Hu; Yanjun Bao; Ziwei Li; Yongji Gong; Rui Feng; Yingdong Xiao; Xiaochun Wu; Zhaohui Zhang; Xing Zhu; Pulickel M Ajayan; Zheyu Fang

doi:10.1016/j.scib.2016.11.002

Temperature dependent Raman and photoluminescence of vertical WS₂/MoS₂ monolayer heterostructures

Sci Bull (Beijing). 2017 Jan 15;62(1):16-21. doi: 10.1016/j.scib.2016.11.002. Epub 2016 Nov 21.

Authors

Zhijian Hu¹, Yanjun Bao², Ziwei Li², Yongji Gong³, Rui Feng², Yingdong Xiao², Xiaochun Wu¹, Zhaohui Zhang², Xing Zhu⁴, Pulickel M Ajayan³, Zheyu Fang⁵

Affiliations

¹ Key Laboratory of Nanoscale Measurement and Standardization National Center for Nanoscience and Technology, Beijing 100190, China.
² State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
³ Department of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA.
⁴ State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China; Key Laboratory of Nanoscale Measurement and Standardization National Center for Nanoscience and Technology, Beijing 100190, China.
⁵ State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China. Electronic address: zhyfang@pku.edu.cn.

PMID: 36718065
DOI: 10.1016/j.scib.2016.11.002

Abstract

Heterostructures from two-dimensional transition-metal dichalcogenides MX₂ have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS₂/MoS₂ monolayer heterostructures. Our result shows that both E¹_2g and A_1g modes of WS₂ and MoS₂ vary linearly with temperature increasing from 300 to 642K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.

Keywords: Heterostructures; Photoluminescence; Raman spectra; Temperature-dependent; Transition metal dichalcogenides.