Improving the linearity of synaptic plasticity of single-walled carbon nanotube field-effect transistors via CdSe quantum dots decoration

Yantao Zhang; Zhong Wang; Jia Liu; Xianjie Wan; Zhou Yu; Guohe Zhang; Chuanyu Han; Xin Li; Weihua Liu

doi:10.1088/1361-6528/acb555

Improving the linearity of synaptic plasticity of single-walled carbon nanotube field-effect transistors via CdSe quantum dots decoration

Nanotechnology. 2023 Feb 13;34(17). doi: 10.1088/1361-6528/acb555.

Authors

Yantao Zhang^{1

2}, Zhong Wang^{1

2}, Jia Liu³, Xianjie Wan³, Zhou Yu³, Guohe Zhang¹, Chuanyu Han^{1

2}, Xin Li^{1

2}, Weihua Liu^{1

2

4}

Affiliations

¹ Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China.
² The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, People's Republic of China.
³ No. 24 Institute, Electronics Technology Group Corporation, People's Republic of China.
⁴ Research Institute of Xi'an Jiaotong University, Zhejiang 311215, People's Republic of China.

PMID: 36689764
DOI: 10.1088/1361-6528/acb555

Abstract

The linearity of synaptic plasticity of single-walled carbon nanotube field-effect transistor (SWCNT FET) was improved by CdSe quantum dots decoration. The linearity of synaptic plasticity in SWCNT FET with decorating QDs was further improved by reducing the P-type doping level from the atmosphere. The synaptic behavior of SWCNT FET is found to be dominated by the charging and discharging processes of interface traps and surface traps, which are predominantly composed of H₂O/O₂redox couples. The improved synaptic behavior is mainly due to the reduction of the interface trap charging process after QDs decoration. The inherent correlation between the device synaptic behavior and the electron capture process of the traps are investigated through charging-based trap characterization. This study provides an effective scheme for improving linearity and designing new-type SWCNT synaptic devices.

Keywords: CdSe quantum dot; SWCNT FET; charging process; linearity; synaptic plasticity.