A D-Band Direct-Conversion IQ Receiver with 28 dB CG and 7.3 dB NF in 130 nm SiGe Process

Fei He; Yuhan Ding; Zhongchen Xu; Menghu Ni; Yibo Tian; Zhenyi Zhang; Zhixiang Shi; Kailei Wang; Qian Xie; Zheng Wang

doi:10.3390/mi14010087

A D-Band Direct-Conversion IQ Receiver with 28 dB CG and 7.3 dB NF in 130 nm SiGe Process

Micromachines (Basel). 2022 Dec 29;14(1):87. doi: 10.3390/mi14010087.

Authors

Fei He¹, Yuhan Ding¹, Zhongchen Xu¹, Menghu Ni¹, Yibo Tian¹, Zhenyi Zhang¹, Zhixiang Shi¹, Kailei Wang¹, Qian Xie¹, Zheng Wang¹

Affiliation

¹ School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China.

Abstract

In this paper, a D-band direct conversion IQ receiver with on-chip multiplier chain is presented. The D-band LNA with gain-boosting and stagger-tunning technique is implemented to provide high gain and large bandwidth. X9 multiplier chain including Marchand balun and quadrature (90°) hybrid is employed to provide four path LO signal to drive IQ mixer. This receiver is implemented in a 130nm SiGe process and consumes a core area of 1.04 mm². From the experimental results, the proposed receiver exhibits a 20 GHz bandwidth from 150 GHz to 170 GHz, with CG of 28 dB and NF of 7.3 dB at 158 GHz.

Keywords: D-band receiver; SiGe process; direct conversion; on-chip multiplier chain; sub-THz.

Grants and funding

62034002 61874022/National Natural Science Foundation of China