A Delay-Cell-Controlled VCO Design for Unipolar Single-Gate Enhancement-Mode TFT Technologies

Bin Li; Siwei Wei; Mingjian Zhao; Rongsheng Chen; Zhaohui Wu; Yuming Xu

doi:10.3390/mi14010032

A Delay-Cell-Controlled VCO Design for Unipolar Single-Gate Enhancement-Mode TFT Technologies

Micromachines (Basel). 2022 Dec 23;14(1):32. doi: 10.3390/mi14010032.

Authors

Bin Li^{1

2}, Siwei Wei^{1

2}, Mingjian Zhao^{1

2}, Rongsheng Chen^{1

2}, Zhaohui Wu^{1

2}, Yuming Xu^{1

2

3}

Affiliations

¹ School of Microelectronics, South China University of Technology, Guangzhou 510640, China.
² Pazhou Laboratory, Guangzhou 510330, China.
³ Huawei Technologies Company, Ltd., Shenzhen 518129, China.

Abstract

This work outperforms the previous literatures by proposing a delay-cell-controlled voltage control oscillator (VCO) design for common unipolar, single-gate, and enhancement-mode thin-film transistor (TFT) technologies. A design example with InZnO TFTs is simulated to verify the proposed design. The design example has a 500 μW power consumption, 0.7 mm² area, 3.8 kHz-8 kHz output frequency range, 600 Hz/V tuning sensitivity, and 4% maximum linear error. This design may have the potential to be used for flexible, low cost, and moderate speed sensor readout interfaces.

Keywords: ring oscillator; thin film transistors; voltage control oscillator.

Abstract

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