Organic field-effect transistor (OFET) gas sensors based on conjugated polymer films have recently attracted considerable attention for use in environmental monitoring applications. However, the existing devices are limited by their poor sensing performance for gas analytes. This drawback is attributed to the low charge transport in and the limited charge-analyte interaction of the conjugated polymers. Herein, we demonstrate that the incorporation of graphitic carbon nitride (g-C₃N₄) into the conjugated polymer matrix can improve the sensing performance of OFET gas sensors. Moreover, the effect of graphitic carbon nitride (g-C₃N₄) on the gas sensing properties of OFET sensors based on poly(3-hexylthiophene) (P3HT), a conjugated polymer, was systematically investigated by changing the concentration of the g-C₃N₄ in the P3HT/g-C₃N₄ composite films. The obtained films were applied in OFET to detect NO gas at room temperature. In terms of the results, first, the P3HT/g-C₃N₄ composite films containing 10 wt.% g-C₃N₄ exhibited a maximum charge carrier mobility of ~1.1 × 10-1 cm2 V-1 S-1, which was approximately five times higher than that of pristine P3HT films. The fabricated P3HT/g-C₃N₄ composite film based OFET sensors presented significantly enhanced NO gas sensing characteristics compared to those of the bare P3HT sensor. In particular, the sensors based on the P3HT/g-C₃N₄ (90/10) composite films exhibited the best sensing performance relative to that of the bare P3HT sensor when exposed to 10 ppm NO gas: responsivity = 40.6 vs. 18.1%, response time = 129 vs. 142 s, and recovery time = 148 vs. 162 s. These results demonstrate the enormous promise of g-C₃N₄ as a gas sensing material that can be hybridized with conjugated polymers to efficiently detect gas analytes.
Keywords: NO gas sensor; charge transfer; conjugated polymers; graphitic carbon nitride (g-C₃N₄); poly(3-hexylthiophene).