Direct Band Gap AlGaAs Wurtzite Nanowires

Daniele Barettin; Igor V Shtrom; Rodion R Reznik; Sergey V Mikushev; George E Cirlin; Matthias Auf der Maur; Nika Akopian

doi:10.1021/acs.nanolett.2c04184

Direct Band Gap AlGaAs Wurtzite Nanowires

Nano Lett. 2023 Feb 8;23(3):895-901. doi: 10.1021/acs.nanolett.2c04184. Epub 2023 Jan 17.

Authors

Daniele Barettin¹, Igor V Shtrom^{2

3

4}, Rodion R Reznik², Sergey V Mikushev², George E Cirlin^{2

3

4}, Matthias Auf der Maur⁵, Nika Akopian⁶

Affiliations

¹ Department of Electronic Engineering, Università degli Studi Niccolò Cusano - Telematica, via don Carlo Gnocchi 3, Rome00166, Italy.
² St. Petersburg State University, Saint Petersburg199034, Russian Federation.
³ Alferov University, Saint Petersburg194021, Russian Federation.
⁴ Institute for Analytical Instrumentation, Russian Academy of Sciences, Saint Petersburg190103, Russian Federation.
⁵ Department of Electronic Engineering, University of Rome Tor Vergata, Rome00133, Italy.
⁶ DTU Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby2800, Denmark.

PMID: 36649590
DOI: 10.1021/acs.nanolett.2c04184

Abstract

Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band $\vec{k} \cdot \vec{p}$ method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.

Keywords: GaAs/AlGaAs; Modeling; Nanowires; k⃗·p⃗; wurtize.