ReS2 on GaN Photodetector Using H+ Ion-Cut Technology

Xinke Liu; Jie Zhou; Jiangliu Luo; Hangning Shi; Tiangui You; Xin Ou; Venkatadivakar Botcha; Fengwen Mu; Tadatomo Suga; Xinzhong Wang; Shuangwu Huang

doi:10.1021/acsomega.2c05049

ReS₂ on GaN Photodetector Using H⁺ Ion-Cut Technology

ACS Omega. 2022 Dec 20;8(1):457-463. doi: 10.1021/acsomega.2c05049. eCollection 2023 Jan 10.

Authors

Xinke Liu¹, Jie Zhou¹, Jiangliu Luo¹, Hangning Shi^{2

3}, Tiangui You^{2

3}, Xin Ou^{2

3}, Venkatadivakar Botcha¹, Fengwen Mu⁴, Tadatomo Suga⁵, Xinzhong Wang⁶, Shuangwu Huang¹

Affiliations

¹ College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, China.
² State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China.
³ Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China.
⁴ SABers Co., Ltd., Tianjing300451, China.
⁵ Collaborative Research Center, Meisei University, Tokyo191-8506, Japan.
⁶ Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen518172, China.

Abstract

The wafer-scale single-crystal GaN film was transferred from a commercial bulk GaN wafer onto a Si (100) substrate by combining ion-cut and surface-activated bonding. Well-defined, uniformly thick, and large-scale wafer size ReS₂ multilayers were grown on the GaN substrate. Finally, ReS₂ photodetectors were fabricated on GaN and sapphire substrates, respectively, and their performances were compared. Due to the polarization effect of GaN, the ReS₂/GaN photodetector showed better performance. The ReS₂/GaN photodetector has a responsivity of 40.12 A/W, while ReS₂/sapphire has a responsivity of 0.17 A/W. In addition, the ReS₂/GaN photodetector properties have reached an excellent reasonable level, including a photoconductive gain of 447.30, noise-equivalent power of 1.80 × 10^-14 W/Hz^1/2, and detectivity of 1.21 × 10¹⁰ Jones. This study expands the way to enhance the performance of ReS₂ photodetectors.