Publisher Correction: Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control

Affiliations

• ¹ Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Korea.
• ² Beyond Silicon Lab, Samsung Advanced Institute of Technology, Gyeonggi, 16678, Korea.
• ³ Department of Chemical Engineering, Hongik University, Seoul, 04066, Korea.
• ⁴ Department of Mechanical and Aerospace Engineering, University at Buffalo, Buffalo, NY, 14260, USA.
• ⁵ Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Korea. hbrlee@inu.ac.kr.