We prove the existence of relatively large Goos-Hänchen (GH) shifts for graphene in the presence of an applied strain in different crystallographic directions for p and s polarized beams. It is shown that GH shifts are smoothly increased by stretching the graphene's lattice. Moreover, we investigate the GH effect for strained graphene as a function of Fermi energy, which can be controlled by external factors such as gate voltage. We show that applied strain along zigzag and armchair orientations gives different results for GH shifts, which could provide a proper tool for the detection of strain in graphene.