Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

Kaijin Kang; Wen Niu; Yanming Zhang; Anlin Li; Xingze Zou; Wei Hu

doi:10.1021/acs.jpclett.2c03676

Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

J Phys Chem Lett. 2023 Jan 19;14(2):347-353. doi: 10.1021/acs.jpclett.2c03676. Epub 2023 Jan 6.

Authors

Kaijin Kang¹, Wen Niu¹, Yanming Zhang¹, Anlin Li¹, Xingze Zou¹, Wei Hu¹

Affiliation

¹ Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.

PMID: 36606717
DOI: 10.1021/acs.jpclett.2c03676

Abstract

Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/(PMA)₂CuBr₄/FTO (PMMA = poly(methyl methacrylate); PMA = C₆H₅CH₂NH₃) architecture. The device exhibits the coexistence of two bipolar resistive switching modes, including counterclockwise and clockwise switching characteristics. The devices with both switching modes show stable endurance (>100 cycles) and long retention performance (>10⁴ s). By applying a suitable electrical stimulation, the counterclockwise and clockwise switching behaviors are interconvertible. Furthermore, the Au/PMMA/(PMA)₂CuBr₄/FTO and Ag/(PMA)₂CuBr₄/FTO devices were fabricated to verify the origin of dual resistive switching behaviors. The similar dual resistive switching behaviors after electroforming processes of three types of memory devices suggest that the interconvertible dual resistive switching characteristics could be attributed to the ionic migration in the (PMA)₂CuBr₄ perovskite layer.