Charge Carrier Recombination Dynamics in MAPb(BrxCl1- x)3 Single Crystals

Zijie Xiao; Tingting Tao; Jingting Shu; Runhui Pan; Wei Dang; Ningjiu Zhao; Shusheng Pan; Wei Zhang

doi:10.1021/acs.jpclett.2c03606

Charge Carrier Recombination Dynamics in MAPb(Br_xCl_{1- x})₃ Single Crystals

J Phys Chem Lett. 2023 Jan 12;14(1):245-252. doi: 10.1021/acs.jpclett.2c03606. Epub 2023 Jan 3.

Authors

Zijie Xiao¹, Tingting Tao², Jingting Shu², Runhui Pan¹, Wei Dang², Ningjiu Zhao³, Shusheng Pan^{1

4}, Wei Zhang^{1

4

5}

Affiliations

¹ School of Physics and Materials Science, Guangzhou University, Guangzhou510006, China.
² Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding071002, China.
³ Songshan Lake Materials Laboratory, Dongguan523808, China.
⁴ Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou510006, China.
⁵ Guangzhou University-Linköping University Research Center on Urban Sustainable Development, Guangzhou University, Guangzhou510006, China.

PMID: 36594895
DOI: 10.1021/acs.jpclett.2c03606

Abstract

Understanding carrier recombination processes in MAPb(Br_xCl_1-x)₃ crystals is essential for their photoelectrical applications. In this work, carrier recombination dynamics in MAPb(Br_xCl_1-x)₃ single crystals were studied by steady-state photoluminescence (PL), time-resolved photoluminescence (TRPL), and time-resolved microwave photoconductivity (TRMC). By comparing TRPL and TRMC, we find TRPL of MAPb(Br_xCl_1-x)₃ (x < 0.98) single crystals is dominated by a hole trapping process while the long-lived component of TRMC is dominated by an electron trapping process. We also find both electron and hole trapping rates of MAPb(Br_xCl_1-x)₃ (x < 0.98) crystals decrease with an increase in Br content. A temperature-dependent PL study shows there are shallow trap states besides the deep level trap states in the MAPb(Br_0.82Cl_0.18)₃ crystal. The activation energy for holes in shallow trap states detrapped into the valence band is ∼0.1 eV, while the activation energy for free holes to be trapped into deep trap states is ∼0.4 eV. This work provides insight into carrier recombination processes in MAPb(Br_xCl_1-x)₃ single crystals.