As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV-vis-NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (I on/I off) of ∼106, fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications.
© 2022 The Authors. Published by American Chemical Society.