Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer

Ke-Jing Lee; Wei-Shao Lin; Li-Wen Wang; Hsin-Ni Lin; Yeong-Her Wang

doi:10.3390/nano12244412

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer

Nanomaterials (Basel). 2022 Dec 10;12(24):4412. doi: 10.3390/nano12244412.

Authors

Ke-Jing Lee^{1

2}, Wei-Shao Lin¹, Li-Wen Wang¹, Hsin-Ni Lin³, Yeong-Her Wang^{1

2}

Affiliations

¹ Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.
² Program on Semiconductor Process Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan 701, Taiwan.
³ Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan.

Abstract

The SrZrTiO₃ (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10⁷, lower operation voltage (V_SET = -0.8 V and V_RESET = 2.05 V), uniform film, and device stability of more than 10⁵ s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.

Keywords: resistive random-access memory (RRAM); sol-gel; strontium zirconate titanium.

Grants and funding

108-2221-E-006-040-MY3/Ministry of Science and Technology