The physicochemical properties of functional graphene are regulated by compositing with other nano-carbon materials or modifying functional groups on the surface through plasma processes. The functional graphene films with g-C3N4 and F-doped groups were produced by controlling the deposition steps and plasma gases via radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The first principles calculation and electrochemistry characteristic of the functional graphene films were performed on Materials Studio software and an electrochemical workstation, respectively. It is found that the nanostructures of functional graphene films with g-C3N4 and F-doped groups were significantly transformed. The introduction of fluorine atoms led to severe deformation of the g-C3N4 nanostructure, which created gaps in the electrostatic potential of the graphene surface and provided channels for electron transport. The surface of the roving fabric substrate covered by pure graphene is hydrophilic with a static contact angle of 79.4°, but the surface is transformed to a hydrophobic state for the g-C3N4/graphene film with an increased static contact angle of 131.3° which is further improved to 156.2° for CF2-modified g-C3N4/graphene film exhibiting the stable superhydrophobic property. The resistance of the electron movement of CF2-modified g-C3N4/graphene film was reduced by 2% and 76.7%, respectively, compared with graphene and g-C3N4/graphene.
Keywords: electrochemical reaction; first principles calculation; functional graphene; plasma processes; superhydrophobic films.