Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping

Guangxu Chen; Sibin Chen; Zewen Lin; Rui Huang; Yanqing Guo

doi:10.3390/mi13122043

Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping

Micromachines (Basel). 2022 Nov 22;13(12):2043. doi: 10.3390/mi13122043.

Authors

Guangxu Chen¹, Sibin Chen¹, Zewen Lin¹, Rui Huang¹, Yanqing Guo¹

Affiliation

¹ School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China.

Abstract

The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiC_x) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and bonding configuration of films were investigated using Raman and Fourier transform infrared absorption spectroscopies, respectively. The PL and analysis results of bonding configurations of films suggested that the enhancement of red PL is mainly caused by the reduction in nonradiative recombination centers as a result of the weak Si-Si bonds substituted by Si-N bonds.

Keywords: SiCx; nitrogen; optical properties; photoluminescence.

Grants and funding

This work was supported by the Guangdong Basic and Applied Basic Research Foundation (2020A1515010432), Special Innovation Projects of Guangdong Provincial Department of Education (2020KTSCX076), Project of Educational Commission of Guangdong Province of China (2019KTSCX096, 2021ZDJS039), Special Funds for the Cultivation of Guangdong College Students’ Scientific and Technological Innovation (“Climbing Program” Special Funds) (pdjh2021b0322).